Recently, the next generation storage technology standards have been released. First, SK Hynix and Samsung will jointly develop a new generation of HBM3 video memory, focusing on improving the transmission bandwidth. At present, each channel of HBM2 video memory can reach a maximum bandwidth of 256GB/s, while HBM3 video memory increases this value to 512GB/s. Since HBM3 adopts a four channel design, it has a maximum of 2TB/s video memory bandwidth. The maximum capacity of HBM2 is 48GB, and that of HBM3 is further improved to 64GB. Of course, the performance is stronger and the power consumption is lower.

It seems that HBM2 only attracted a certain amount of attention when the GP100 architecture was released, and it has not been used in the graphics card industry since then. Compared with the small HBM video memory, Micron also announced the GDDR6 video memory specification recently. The video storage standard on GTX1080 is still the mainstream GDDR, not HBM. The GDDR standard it carries is the GDDR5X of Micron, which is a transitional product between the GDDR5 and the next generation standard GDDR6. The maximum frequency of GDDR5X on GTX1080 reaches 10Gbps. The next generation GDDR6 video storage standard will be increased to 14-16Gbps.

Video memory is available What about memory? Today, Micron officially announced the detailed specifications of DDR4 successor - DDR5 memory. The source of the message is from the file published by Micron. The DDR5 memory capacity is tentatively 8-32GB, the I/O bandwidth is between 3.2Gbps and 6.4Gbps, the voltage is 1.1V, and the memory bandwidth is twice that of DDR4 memory. For comparison, let's take a look at the relevant values when the 12 year DDR4 standard specification was just released. The DDR4 memory capacity standard is 4-8GB, and the I/O bandwidth is between 1.6Gbps and 3.2Gbps. It can be seen that the DDR5 related parameters are steadily improving. The standard voltage is 1.2V, and the standards of the previous three generations are 2.5V, 1.8V and 1.5V respectively. The voltage values of these two generations do not change much.

In terms of memory bandwidth, the DDR4 take-off frequency is 1600MHz, and the specification standard mentions that the maximum can reach 4266MHz. Zhiqi has released a similar memory module in August 2015. The dual channel bandwidth can reach 68GB/s. The memory bandwidth of DDR5 mentioned by MG above will be twice that of DDR4. In other words, it is likely to reach 136GB/s. Then the estimation of takeoff frequency and maximum frequency will be further improved.

Finally, Micron also said that they will successfully stream DDR5 memory samples in 2018, and will officially mass produce them in 2019.