According to the latest report of Korean media, Samsung Semiconductor has developed the world's first SRAM based on 10nm FinFET technology. In fact, the IBM Semiconductor Alliance produced the world's first 10nm wafer as early as July this year. However, due to the technical difficulties of the 10nm process, major semiconductor manufacturers have postponed their 10nm process plans.

The Chinese translation of the so-called SRAM is static random access memory, which is mostly used for CPU caching. Compared with 14nm, the area of 10nm based SRAM can be reduced by about 30%, which means that the power consumption and heat generation of the CPU will be reduced to a certain extent, and more caches can be crammed into a smaller area, which can improve the performance of the CPU.

As far as the current 10nm progress of various companies is concerned, IBM's commercial 10nm process will not be available until 2018 at the earliest, and Intel's 10nm process has also been postponed to 2017. TSMC has announced that it will mass produce 10nm CPUs in the first quarter of 2017. According to Samsung's current plan and progress, 10nm mass production CPUs can be achieved by the end of 2016 at the earliest. Perhaps the Galaxy S8 can catch up with the debut of 10nm SoC.