On December 5, 2017, Sandisk Flash released its new generation of iNAND embedded flash chips, which include UFS and eMMC embedded flash chips.

According to Sandisk's official introduction, these two chips both use Sandisk's 64 layer 3D stacking technology, of which the iNAND 8521 is UFS2.1 flash memory, and the iNAND 7550 is eMMC flash memory. The continuous read speed of the iNAND 8521 exceeds 800MB/s, the write speed exceeds 500MB/S, and the random read speed is 10 times faster than the previous generation iNAND 7232. Random reading speed is up to 50K IOPs, and 45K IOPs are written.

The continuous write speed of the iNAND 7550 is 260MB/S. Sandi said that both chips have been delivered to the factory for sample production, and the maximum capacity version of both chips is 256GB.

Coincidentally, on the same day, Samsung officially announced that its 512GB eUFS2.1 flash memory has entered the mass production stage. In contrast, Samsung's 512GB flash memory has a weaker performance than Sandi's announcement today. Samsung said that the 512GB eUFS flash memory is twice as fast as the previous 48 layer V-NAND 256GB eUFS. Its sequential read speed is 860MB/S, sequential write speed is 255MB/S, random 4K read speed is 42000 IOPS, and random 4K write speed is 40000 IOPS.