Recently, South Korean media reported that Samsung Electronics was accused of infringing the patents related to the fin type field effect transistor (FinFET) process held by the Korean Academy of Science and Technology (KAIST), and was facing litigation. According to the report, the 10nm FinFET process was held by the Korean Academy of Science and Technology, but Samsung quickly stole the technology and prepared to use it to produce Qualcomm's latest Snapdragon 835 SoC. KAIST said that Samsung stole the technology when it invited Lee Jong ho, a FinFET technology developer and professor at Seoul University, to show the company's engineers the principles of FinFET technology, and Lee Jong ho was one of KAIST's partners. At the same time, Intel, which also uses FinFET technology, has been licensed by KAIST, but Samsung, Qualcomm and TSMC have not applied to KAIST for FinFET technology patents.